气体分析
Gas Analysis

A) HPR-20 System

A1

HPR-20 Dynamic Sampling Mass Spectrometer system for catalyst analysis - Application Note 227.
Hiden Applications Staff

A2

A Comparison of CaO, beta and a dealuminated Y by ammonia TPD and by temperature programmed Prophylamine cracking
Michael V Juskelis, Joseph P Slanga, Terry G Roberie, Alan W Peters
W R Grace & Co-Conn., Columbia , Maryland 21044
Journal of Catalysis ; Vol. 138 , No. 1, November 1992.

A3

Characterisation of titania surface area in mixed oxide systems by temperature programmed reaction to 2-Propanol.
J E Swain+, M V Juskelis+, J P Slanga, J G Miller & M. Uberoi
W R Grace & Co-Conn., Columbia , Maryland 21044
Journal of Catalysis ; Vol. 139 , No 2. 1993.

B)  HPR-30 System

IN-SITU PROCESS MONITORING

B1

In-situ mass spectrometric study of the gas-phase species involved in CVD of diamond as a function of filament temperature
C A Ergo, P W May, C R Henderson, M N R Ashford, K N Rosser, (a) N M Everitt
School of Chemistry, University of Bristol, Cantock's Close, Bristol, BS8 1TS, UK
(a) Department of Aerospace Engineering, University of Bristol, Bristol, BS8 1TR, UK
Presented at the 5th European Conference on Diamond, Diamond-like and Related Materials, II Ciocco, Tuscany, Italy 25-30th Sept. 1994. Manuscript submitted to Diamond and Related Materials as part of the conference proceedings.

B2

Expitaxial growth of 3C-SiC(111) on Si wafer from tetramethylsilane by rapid thermal chemical vapour deposition : growth mechanism
(a) Y H Seo, K S Nahm, (b) E-K Suh, H J Lee, (c) Y G Hwang
Semiconductor Physics Research Center (a) Department of Chemical Technology
(b) Department of Physics, Jeonbuk National University, Jeonju 560-756, Republic of Korea
(c) Department of Physics, Wonkwang University, Iri 570-749, Republic of Korea
Presented at ICSCRM 95

B3

Gas-phase composition measurements during chlorine assisted chemical vapour deposition of diamond: A molecular beam mass spectrometric study
R S Tsang, P W May, M N R Ashford, K N Rosser, (a) C A Rego
School of Chemistry, University of Bristol, Cantock's Close, Bristol, BS8 1TS, UK
(a) Department of Chemistry, The Manchester Metropolitan University, Chester Street, Manchester, M1 5GD, UK
Accepted for publication in The Journal of Applied Physics

B4

Process control for III-V semiconductor device fabrication using mass spectroscopy
A P Webb
GEC Marconi Materials Technology Group, Caswell, NN12 8EQ, UK
Published in Applied Surface Science 63 (1993) 70-74 (Elsevier Science Publishers BV)

 


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