B)  Molecular Beam Epitaxy (MBE)

M3

Growth, microstructure and electrochemical oxidation of MBE-grown c-axis La 2 CuO 4 thin films
Frederic Arrouy 1,2 , Jean-Pierre Locquet 2 , Erica Williams 2,3 , Rudiger Berger 24 , Christoph Gerber 2 , Christopher Monroux 5 , Jean-Claude Grenier 5 and Alain Wattiaux 5
1 Institute of Inorganic Chemistry, University of Zurich, CH-8057 Zurich, Switzerland
2 IBM Research Division, Zurich Research Laboratory, CH-8803 Ruschlikon, Switzerland
3 Department de Physique de la Matiere Condensee, Universite de Geneve, CH-1211 Geneve
4 Institute of Physics, University of Basel, CH-4056 Basel, Switzerland
5 Institut de Chimie de la Matiere Condensee de Bordeaux, Chateaux de Brivazac, F-33608 Pessac Cedex, France
Submitted to Phys, Rev.B (January 1995)

M4

Characterization of MBE-grown ultrathin films in the La 2-x Sr x CuO 4~6 system
Y Jaccard ab , A Crettona c , E J Williams ac , J-P Locquet a , E Machler a , C Gerber a , T Schneider a , 0 Fischer c and P Martinoli b
a IBM Research Division, Zurich Research Laboratory, CH-8803 Ruschlikon, Switzerland
b Institut de Physique, Universite de Neuchatel, Switzerland
c Department de Physique de la Matiere Condenseem Universite de Geneve, CH-1211 Geneve

M5

In Situ Characterization of Atomic Layer Deposition Processes by a Mass Spectometer
Mikko Ritala, Marika Juppo, Kaupo Kukli*, Antti Rahtu & Markku Leskel?
Laboratory of Inorganic Chemistry, University of Helsinki, Finland
*Permanent address: Institute of Experimental Physics & Technology, University of Tarru, Estonia

M6

Substitutional carbon incorporation into molecular beam epitaxy-grown Si1-yCy layers
S. Zerlauth, C Penn, H Seyringer, G Brunthaler, G auer & F Sch?ffler
Institut für Halbleiterphysik, Johannes Kepler Universitat Linz, Altenbergerstr. 60, A-4040, Austria
J. Vac. Sci. Technol. B 16 (3), May / June 1998