C)  Chemical Vapour Deposition (CVD)

M7

Gas Phase Chemistry in Diamond-Producing Plasmas
Linda S PIano,* David A Stevenson** & John R Carruthers+
*Crystallume, 125 Constitution Drive, Menlo Park, CA 94025, USA
**Stanford University, Department of Materials Science & Engineering, Stanford, CA 94025, USA
+lntel Corp., 3065 Bowers Ave., Santa Clara, CA 95052, USA

M8

DC Glow Discharge Modeling Applied to Diamond Film Growth Plasma Reactors
M Surendra,* David B Graves* & Linda S PIano**
*Dept. of Chemical Engineering, University of California - Berkeley, Berkeley, CA, USA
**Crystallume, 125 Constitution Drive, Menlo Park, CA 94025, USA

M9

Molecular Beam Mass Spectrometric Study of the Spatial Distribution of Gas-Phase Species Involved in the Growth of HFCVD Diamond Films
C A Rego, P W May, C R Henderson, M N R Ashfold, K N Rosser & N M Everitt*
School of Chemistry, University of Bristol, Cantock's Close, Bristol BS8 ITS, UK.
*Department of Aerospace Engineering, University of Bristol, Bristol BS8 1 TR, UK.
Presented at the Fourth International Conference on New Diamond Science & Technology, Kobe, Japan, July 18-22,1994

M10

In-situ mass spectrometric studv of the gas-phase species involved in CVD of diamond as a function of filament temperature
C A Rego, P W May, C R Henderson, M N R Ashfold, K N Rosser & N M Everitt*
School of Chemistry, University of Bristol, Cantock's Close, Bristol BS8 ITR, U.K.
*Department of Aerospace Engineering, Uniwrsity of Bristol, Bristol BS8 ITR, U.K.
To be presented at the 5th European Conference on Diamond, Diamond-like & Related Materials, II Ciocco, Tuscany Italy, 25-30 Sept. 1994. Manuscript submitted to Diamond & Related Materials as part of the conference proceedings.

M11

Epitaxial growth of 3C-SiC(111) on Si wafer from tetramethylsilane bv rapid thermal chemical vapor deposition: growth mechanism
Y H Seo 1 , K S Nahm 1 , E-K Suh 2 , H J Lee 2 & Y G Hwang 3
Semiconductor Physics Research Center, 1 Department of Chemical Technology,
2 Departlnent of Physics, Jeonbuk National University, Jeonju 560- 756, Republic of Korea
3 Department of Physics, Wonkwang University, Iri 570-749, Republic of Korea
Inst. Phys. Conf. Ser. No 142: Chapter I

M12

Application of the DQ100 High Performance Mass Spectrometer System to Plasma Enhanced Chemical Vapour Deposition (PECVD) Process Gas Analysis
Applications Note, Hiden Analytical

M13

Gas-phase composition measurements during chlorine assisted chemical vapour deposition of diamond: A molecular beam mass spectrometric study
C A Rego, R S Tsang, P W May, M N R Ashfold & K N Rosser
School of Chemistry, University of Bristol, Cantock's Close, Bristol BS8 ITS, UK
J. Appl. Phys. 79 (9), 1. May 1996

M14

Thermal stability & desorption: Group III nitrides prepared by metal organic chemical vapor deposition
O Ambacher, M S Brandt, R Dimitrov, T Metzger & M Stutzmann,
Walter Schottky Institute, Technicai University Munich, D-85748 Garching, Germany
R.A. Fischer and A. Miehr,
Anorg. Chem.lnstitute, Ruprecht-Karls University, D-69120 Heidelberg,
Germany.
and A Bergmaier & G Dollinger,
Physik-Dept E-12, TU Munich, D-85748 Garching, Germany
J. Vac. Sci. Technol. B 14 (6), Nov/Dec 1996

M15

Sheath thickness in very-high-frequency plasma chemical vapour deposition of hydrogenated amorphous silicon
W G J H M van Sark, H Meiling, E A G Hamers, J Bezemer & W F van der Weg
Department of Atomic & Interface Physics, Debye Institute, Utrecht University, P.0. Box 80000, NL-3508 TA Utrecht, The Netherlands
J. Vac. Sci. Technol. A 15 (3), May/Jun 1997

M16

Effects of Experimental Parameters on Void Formation in the Growth of 3C-SiC Thin Film on Si Sibstrate
Young Hun Seol a , K Wang Chul Kim b , Hyun Wuk Shim b , Kee Suk Nahm a,b , Eun-Kyung Sub b,c & Hyung Jae Lee b,c
a School of Chemical Engineering & Technology,
b Dept of Semiconductor Science & Technology
c Dept of Physics & Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
and Dong-Keun Kim & Byung-Teak Lee
Dept of Metallurgical Engineering, Chonnam National University, Kwangiu 500-757, Korea
J.Electrochem.Soc. , Vol 145 No 1, January 1998

M17

Growth mechanism of 3C-SiC(III) films on Si using tetramethylsilane by rapid thermal chemical vapor desposition
Y H Seo & K S Nahm,
Dept of Chemical Technology & Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Republic of Korea
E-KSuh & HJLee,
Dept of Physics & Semiconductor Physics Research Center, Chonbuk National University, Chonju 561 -756, Republic of Korea
and Y.G. Hwang
Dept of Physics, Wonkwang University, Iksan 570-749, Republic of Korea
J. Vac. Sci. Technol. A 15 (4), Jul/Aug 1997