PLASMA ETCHING STUDIES

C1

Ion Energy Distributions in SiCl 4 and Ar/O 2 Dry Etching Discharges
D.A.O. Hope a , G.J. Monnington a , S.S.Gill a , N. Borsing b , J.A. Smith b , J.A. Rees c
a D.R.A.,St Andrews Road, Great Malvern , Worcs. UK
b Hiden Analytical, 231 Europa Boulevard, Warrington WA5 5TN, UK
c University of Liverpool, Dept of Electrical Engineering, Brownlow Hill, Liverpool, UK
Vacuum, Vol 44 , Numbers 3/4 page 245 to 248, 1993

C2

Identification of Volatile Products in Low Pressure Hydrocarbon ECR Reactive Ion Etching of InP and GaAs
D.L. Melville, J.G. Simmons and D.A. Thompson
McMaster University, Centre for Electrophotonic Materials and Devices, 1280 Main Street West, Hamilton, Ontario L8S 447, Canada
J. Vac. Sci. Technol. B 11 (6), Nov/Dec 1993 0734-211X/93/11(6)/2038/8/$1.00

C3

Hydrocarbon ECR Reactive Ion Etching of III-V Semiconductors with SIMS Plasma Probe Diagnostics
D.L. Melville, J.G. Simmons and D.A. Thompson
McMaster University, Centre for Electrophotonic Materials and Devices, 1280 Main Street West, Hamilton, Ontario L8S 447, Canada
Presented at: MRS Meeting, Boston, Nov 29-Dec 3 1993

C4

Oxidative Decomposition of Polymethylmethacrylate (PMMA) in Plasma Etching
Michael Zeuner*, Jürgen Meichsner* and Jams-Ulrich Poll
*Technische Universit?t Chemnitz-Zwickau, Institute of Physics, 09107 Chemnitz, Germany
ü F?rderzentrum Mittelsachsen, Heinrich-Heine-Strasse 5, 09557 Fl?ha, Germany
Plasma Sources Sci. Technol. 4 (1995) Pages 406-415

C5

The Substrate-Process Interface in Thin Barrier Film Coating
Ch. Bichler, M. Bischoff, H.-C. Langowski and U. Moosheimer
Fraunhofer Institute for Food Technology and Packaging, Schragenhofstra?e 35, Müchen, Germany.
Presented at: 39th Annual Technical Conference of the Society of Vacuum Coaters, May 5-10 1996 Philadelphia, PA

C6

Mass spectrometic observation in RF plasma of SF 6 / Ar mixture
Shinya Sasaki, Kazuya Nagaskei, Istuo Ishikawa, Eiichi Nishimura, Yukinori Saito and
Shinji Suganomata.
Faculty of Engineering, Yamanashi University, Takeda 4-3-11, Kofu 400, Japan.
*Present affiliation: Tokyo Electron Yamanashi Ltd.

C7

Silicon Etching by Alternative Irradiations of Negative and Positive Ions
Toshikazu SHIBAYAMA, Haruo SHINDO* and Yashuhiro HORIIKE
Department of Electrical Engineering, Toyo University, Kawagoe 350, Japan

C8

Studies of Ion Kinetic-Energy Distributions in the Gaseous Electronics Conference RF Reference Cell
J.K. Olthoff, R.J. Van Brunt and S.B. Radovanov.
National Institute of Standards and Technology, Gaithersburg, MD 20899-0001.
Volume 100, Number 4, July-August 1995

C9

High-aspect-ratio- Contact Hole Etching Technology Using Inductively Coupled Plasma
Shinichi Imai, Nobuhiro Jiwari and Hideo Nikoh
Kyoto Reseach Laboratory, Matsushita Electronics Corp, 19 Nishikujo-Kusugacho,
Minami-ku, Kyoto 601.

C10

Angle Resolved Positive Ion Mass Spectrometry in an RF Discharge during High Aspect Ratio Etching
Eva Stoffels, Winfred Willem Stoffels, Kunihide Tachibana & Shinichi Imai*
Dept of Electronic Science & Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-01, Japan.
* Matsushita Electronics Corp., Nishikujo-Kasugacho 19, Minami-ku, Kyoto 601, Japan.
Presented at the 3rd International Conference on Reactive Plasmas in Nara, Japan on January 21-24, 1997. Submitted to the special issue of the Japanese Journal of Applied Physics.

C11

Electron Attachment Mass Spectrometry for the Detection of Electronegative Species in a Plasma
Winfred Willem Stoffels, Eva Stoffels & Kunihide Tachibana
Dept. of Electronic Science & Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-01, Japan.
Presented at the 3rd International Conference on Reactive Plasmas in Nara, Japan on January 21-24, 1997. Submitted to the special issue of the Japanese Journal of Applied Physics.

C12

Residence time effects on SiO 2 /Si selective etching employing high density fluorocarbon plasma
Yasuhiko Chinzei Chinzei, Takanori Ichiki, Yannick Feurprier, Yasuhiro Horiike
Toyo University, 2100 Kujirai, Kawagoe 350, Japan
Naokatsu Ikegami
Oki Electric Industry Co Ltd, 550-1 Higashiasakawa, Hahioji 193, Japan
Haruo Shindo
Tokai University, 1117 Kitakaname, Hiratsuka 259-12, Japan
J. Vac. Sci. Technol. B 16 (3), May/Jun 1998, 1043-1050

C13

Ionic species in 13.56MHz discharges in CF 4 gas and mixtures of It with Ar and O 2
Itsuo Ishikawa, Shinya Sasaki, Kazuya Nagaseki*, Yokinori Saito & Shinji Suganoimata
Faculty of Engineering, Yamanashi Universityk Takeda 4-3-11, Kufa 400, Japan
*Tokyo Electron Yamanashi Ltd, Kitashimojo 2381-21, ujii-mach89i, Nirasaki 407, Japan
J pn. J. Appl. Phys. Vol. 36 (1997), 4648-465

C14

Electron attachment mass spectometry as a diagnostics for electronegative gases and plasmas
E Stoffels , W W Stoffels a , & K Tachibana
Dept. of Electronic Science & Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-01, Japan.
a On leave from Dept of Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands.
Rev. Sci. Instrum . 69 (1) January 1998, 116-122

C15

Polymerization of fluorocarbons in reactive ion etching plasmas
W W Stoffels a , E Stoffels, & K Tachibana
Dept. of Electronic Science & Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-01, Japan.
a On leave from Dept of Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands.
J. ac. Sci. Technol. A 16 (1), Jan/Feb 1998, 87-95

C16

Charged and Neutral Species in Cl 2 /BCl 3 Reactive Gas Discharges for Metal Etching
R Jayaraman, R T McGrath, G Hebner* and J A Sherwin
227 Hammond Building, Dept of Engineering Science & Mechanics, Penn State University, University Park, PA 16802, USA
*PO Box 5800 Sandia National Laboratories, Albuquerque, NM 87185, USA

C17

A mass spectrometer investigation of the by-product ions from dry etching InP
E W Sabin
TRW, One Space Park, CA 90278 USA
Submitted to J. Vac. Sci. Technol.

C18

Effects of Plasma Conditions on the Etch Properties of AlcGal-cN
H S Kim1*, D H Lee*, J W Lee**, T I Kim**, G Y Yeom*
*Dept of Materials Engineering, Sungkyunkwan University, Suwon, 440-746, Korea
**Photonics Lab., Samsung Advanced Institute of Technology, Suwon, 440-600, Korea

C19

Etch rate control in a 27 MHz reactive ion etching system for ultralarge scale integrated circuit processing
T Tatsumi, a) Y Hikosaka, S Morishita, M Matsui & M Sekine
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies (ASET), Yokohama Kanagawa 244-0817, Japan
J. Vac. Sci. Technol. A 17 (4), Jul/Aug 1999

C20

Magnetized inductively coupled plasma etching of GaN in Cl 2 /BC1 3 plasmas
Y H Lee, Y J Sung, G Y Yeom, J W Lee* & T I Kim*
Department of Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
*Photonics Semiconductor Laboratory, Samsung Advanced Insitute of Technology, Suwon 440-660, Korea
J. Vac. Sci. Technol. A 18 (4), Jul/Aug 2000

C21

In situ characterization of residues formed on a plasma-etching chamber
Hiroki Kawada, Miyuki Yamane, Hiroyuki Kitsunai & Shinichi Suzuki
Mechanical Engineering Research Laboratory, Hitachi Ltd., Kandatsu 502, Tsuchiura, Ibaraki 300-0013, Japan
J. Vac. Sci. Technol. A 19 (1), Jan/Feb 2001

C22

Ion energy distributions and optical emission spectra in NF 3 -based process chamber cleaning plasmas
Hsin-Pai Hsueh & Robert T McGrath, Bing Ji*, Brian S Felker*, John G Langan* & Eugene J Karwack*
Electronic Materials & Processing Research Laboratory, Materials Research Institute, Penn State University, University Park, PA 16802, USA
*Air Products & Chemicals Inc, 7201 Hamilton Boulevard, Allentown, Pennsylvania 18195, USA
J. Vac. Sci. Technol. B 19 (4), Jul/Aug 2001

C23

Generating high-efficiency neutral beams by using negative ions in an inductively coupled plasma source
Seiji Samukawa, Keisuke Sakamoto, Katsunori Ichiki*
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan
*Ebara Research Co., Ltd., 4-2-1 Honfujisawa, Fijisawa, Kanagawa 251-8502, Japan
J. Vac. Sci. Technol.A 20 (5), Sept/Oct 2002, 1566-1573