F1

Plasma diagnostics on the G.E.C. reference cell at N.I.S.T. Washington.
Dr Alan Rees
Department of Electrical Engineering, Liverpool University, U

F2

A rotating disc gauge for absolute total pressure measurement in high vacuum
A Chambers & A D Chew (Physics Department, University of York, York, YO1 5DD, UK )
A P Troup (Edwards High Vacuum International, Crawley, West Sussex, RH10 2LW, UK)

F3

A new flame-ion mass spectrometer: chemi-ionization of lanthanum observed in hydrogen - oxygen - argon flames.
John M Goodings, Carl S Hassanali, Patricia M Patterson, Christine Chow
Department of Chemistry & Centre for Research in Earth & Space Science, York University, 4700 Keele Street, North York, Ontario, M3J 1P3, Canada

F4

Low temperature growth of SiC thin films on Si and 6H-SiC by solid-source molecular beam epitaxy.
A Fissel, B Schr?ter & W Richter
Institut für Festkorperphysik, Friedrich-Schiller-Universitat Jena, Max-Wien-Platz 1, D-07743 Jena, Germany

F5

Residual Gas Analysis in Vacuum Processing.

F6

Preliminary measurements illustrating the effect of desorption and molecular residence times on the molecular drag process.
Andrew D Chew a), Emma R Dedman b), Paul A Abreu a) & Ian Creaye a)
a)BOC Edwards, Crawley, West Sussex, RH10 2LW, UK
b)The Blackett Laboratory, Imperial College, London, SW7 2AZ, UK.

F7

Summary sheets of abstracts presented at the 51st Annual Gaseous Electronics Conference & the 4th International Conference on Reactive Plasmas, Maui, Hawaii.

• Gas Phase & Surface Diagnostics in Fluorocarbon Plasmas for SiO 2 Etching
• Enhancing Ionisation by Electron Injection into Low Temperature Plasmas
• Ion Energy Distributions & their Abundance in Inductively Coupled Plasmas
• Mass Spectrometric Investigations of Ionic Species in RF Discharges in Cl 2 , N 2 , 0 2 , & their Mixtures with Ar
• Measurements of Charged & Neutral Species in BCl 3 , Cl 2 , Reactive Gas Discharges for Metal Etching
• Behaviours of CFx (x - 1.3) & Polymeric Species in electron Cyclotron Resonance Fluorocarbon Plasmas
• Ion & Radical Flux Estimates at Wafer Surface in Dual Frequency Narrow-Gap RIE
• Negative & Positive Ion Energies in an RF Plasma in Nitrous Oxide- PECVD of Silicon Thin Films
  Plasma Diagnostics: Use & Justification in an Industrial Environment- Ionisation & Attachment Processes in an RF Plasma in Carbon Tetrafluoride